Technique for etching monolayer and multilayer materials
US9153453B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 10, 2012 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Feb 10, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K2201/067
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF3, Cl2, and O2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.