Semiconductor device having metal plug and method of forming the same
US9153499B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2012 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Nov 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0149
Abstract
Provided is a semiconductor device including first, second and third source/drain regions. A first conductive plug in contact with the first source/drain regions, having a first width and a first height, and including a first material is provided. An interlayer insulating layer covering the first conductive plug and the substrate is disposed. A second conductive plug vertically penetrating the interlayer insulating layer to be in contact with the second source/drain regions, having a second width and a second height, and including a second material is provided. A third conductive plug vertically penetrating the interlayer insulating layer to be in contact with the third source/drain regions, having a third width and a third height, and including a third material is disposed. The second material includes a noble metal, a noble metal oxide or a perovskite-based conductive oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.