Semiconductor device with an insulating terminal table
US9153512B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2011 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Apr 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a semiconductor-element substrate in which a front-surface electrode pattern is formed on a surface of an insulating substrate and a back-surface electrode is formed on another surface; semiconductor elements affixed to the surface of the front-surface electrode pattern opposite the insulating substrate; and a sealing resin member which covers the semiconductor element and the semiconductor-element substrate, wherein at a position of the front-surface electrode pattern where the position has potential equivalent to that of the front-surface electrode pattern at a position where a semiconductor element is bonded, an insulating terminal table formed with a conductive relay terminal and an insulating member that insulates the relay terminal and the front-surface electrode pattern from each other are provided, and wiring from the semiconductor element to the outside is led out via the relay terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.