Thin film transistor and method for manufacturing the same
US9153651B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2013 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Jul 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.