Semiconductor device
US9153673B2 · kind B2 · utility
2Cited by
1References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2012 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Feb 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
Abstract
In a current-prioritized IGBT, a collector conductive layer is connected to one collector active region included in a collector region by a plurality of contacts. The number of contacts through which the collector conductive layer is connected to the one collector active region is larger than the number of contacts through which the emitter conductive layer is connected to one base active region included in a base region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.