Semiconductor structure having nanocrystalline core and nanocrystalline shell
US9153734B2 · kind B2 · utility
5Cited by
16References
24Claims
0Family size
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Key dates
| Filing date | May 28, 2013 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | May 28, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2004/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor structure involves forming an anisotropic nanocrystalline core from a first semiconductor material, the anisotropic nanocrystalline core having an aspect ratio between, but not including, 1.0 and 2.0, and forming a nanocrystalline shell from a second, different, semiconductor material to at least partially surround the anisotropic nanocrystalline core.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.