Wafer-level light emitting diode package and method of fabricating the same
US9153750B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2015 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | May 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
A light emitting diode (LED) package includes a plurality of light emitting cells each including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer of each of the light emitting cells, the contact holes exposing the first conductive type semiconductor layer of each of the light emitting cells; a connector located arranged on a first side of the light emitting cells and electrically connecting two adjacent light emitting cells to each other; a first bump arranged on the first side of the light emitting cells; and a second bump arranged on the first side of the light emitting cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.