Double bulk acoustic resonator comprising aluminum scandium nitride
US9154111B2 · kind B2 · utility
28Cited by
25References
23Claims
0Family size
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Key dates
| Filing date | Feb 27, 2013 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Nov 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/585
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method of forming a double bulk acoustic resonator structure comprises forming a first electrode on a substrate, forming a first piezoelectric layer on the first electrode, forming a second electrode on the first piezoelectric layer, forming a second piezoelectric layer on the second electrode, and forming a third electrode on the second piezoelectric layer. The first and second piezoelectric layers are formed by a sputter deposition process using at least one sputter target comprising a combination of scandium and aluminum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.