Patent · US Active

Microstructured hot stamping die

US9155129B2 · kind B2 · utility

2Cited by

10References

15Claims

0Family size

Assignee

Heraeus Sensor Technology GmbH · DE

Inventors

Karlheinz Wienand · Aschaffenburg, DE
Matsvei Zinkevich · Goldbach, DE

Key dates

Filing date	Jun 27, 2012
Grant date	Oct 6, 2015
Priority date	—
Expiry date	Jun 27, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T29/49146
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

A stamping die for hot stamping a material includes a profiled stamping surface, wherein the stamping die includes at least one thermally insulating substrate, on which an electrically conductive structure having a heating resistor is arranged, and wherein the electrically conductive structure is covered by an electrically insulating film. The surface of the electrically insulating film includes the profiled stamping surface and the electrically insulating film covers at least the heating resistor such that the electrically insulating film with the stamping surface can be electrically heated by the heating resistor. A method for hot stamping a material using such a stamping die includes heating the resistor to a temperature between 100° C. and 800° C.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.