Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor
US9156705B2 · kind B2 · utility
3Cited by
17References
45Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2010 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Nov 12, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/442
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Processes for producing polycrystalline silicon by thermal decomposition of dichlorosilane are disclosed. The processes generally involve thermal decomposition of dichlorosilane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.