System for real-time analysis of material distribution in CIGS thin film using laser-induced breakdown spectroscopy
US9157802B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2011 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Nov 11, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/718
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention relates to a process control system which can measure the physical properties of a CIGS thin film in real-time in a continuous production line of a CIGS thin film solar cell, more specifically to a system for real-time analysis of material distribution of a CIGS thin film comprising: a header, which comprises a laser irradiation unit producing plasma from the CIGS thin film by irradiating a laser beam to a part of the CIGS thin film; and a spectrum detection optical unit detecting a spectrum generated from the plasma; a transfer unit, which transfers the header at the same rate and to the direction with the transfer rate and direction of the CIGS thin film; and a spectrum analysis unit, which analyzes the spectrum detected by the spectrum detection optical unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.