Methods and apparatus for low input voltage bandgap reference architecture and circuits
US9158320B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 7, 2014 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Aug 7, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/30
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
In some embodiments, an apparatus includes a bandgap reference circuit having a first bipolar junction transistor (BJT) that can receive a current from a node having a terminal voltage and can output a base emitter voltage. The apparatus also includes a second bipolar junction transistor (BJT) having a device width greater than a device width of the first BJT. The second BJT can receive a current from a node having a terminal voltage and output a base emitter voltage. In such embodiments, the apparatus also includes a reference generation circuit operatively coupled to the first BJT and the second BJT, where the reference generation circuit can generate a bandgap reference voltage based on the base emitter voltage of the first BJT and the base emitter voltage of the second BJT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.