Ring-shaped magnetoresistive memory device and writing method thereof
US9159394B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2014 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | May 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ring-shaped magnetoresistive memory device includes a ring-shaped magnetoresistive memory cell, a first conductor, and a second conductor. The first conductor is positioned on a first surface of the ring-shaped magnetoresistive memory cell for generating a first magnetic field pulse. The second conductor is positioned on a second surface of the ring-shaped magnetoresistive memory cell for generating a second magnetic field pulse. The first surface is opposite to the second surface. An extension direction of the first conductor is perpendicular to an extension direction of the second conductor. A time delay is between the first magnetic field pulse and the second magnetic field pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.