Methods of forming a semiconductor device
US9159582B2 · kind B2 · utility
3Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2008 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Nov 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to methods for forming a high-k gate dielectric, the methods comprising the steps of providing a semiconductor substrate, cleaning the substrate, performing a thermal treatment, and performing a high-k dielectric material deposition, wherein said thermal treatment step is performed in a non-oxidizing ambient, leading to the formation of a thin interfacial layer between said semiconductor substrate and said high-k dielectric material and wherein the thickness of said thin interfacial layer is less than 10 Å.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.