Methods of manufacturing nitride semiconductor devices
US9159583B2 · kind B2 · utility
0Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2014 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Jun 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of manufacturing a nitride semiconductor device. The method includes forming a plurality of electrodes on a growth substrate on which first and second nitride semiconductor layers are sequentially stacked, forming upper metal layers on the plurality of electrodes respectively, removing the growth substrate to expose a lower surface of the first nitride semiconductor layer, and forming a third nitride semiconductor layer and a lower metal layer sequentially on the exposed lower surface of the first nitride semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.