Semiconductor device
US9159722B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2014 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Jul 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
A semiconductor device includes a transistor region and diode region. A plurality of transistors is in the transistor region and at least one diode is in the diode region. The transistors include first and second body regions of a first conductivity type. The dopant concentration in the second body region is greater than the dopant concentration in the first body region. The diode includes first and second anode regions of the first conductivity type. The dopant concentration in the second anode region is greater than the dopant concentration in the first anode region. A total dopant amount in the second body region within a first block portion of the semiconductor substrate is greater than a total dopant amount in the second anode layer within a second block portion of the semiconductor substrate of the same size as the first block portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.