Display device, thin film transistor, method for manufacturing display device, and method for manufacturing thin film transistor
US9159747B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2014 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Feb 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/451
Abstract
According to one embodiment, a display device includes a substrate unit, a thin film transistor, a pixel electrode and a display layer. The substrate unit includes a substrate, a first insulating layer provided on the substrate, and a second insulating layer provided on the first insulating layer. The thin film transistor is provided on the substrate unit and includes a gate electrode provided on the second insulating layer, a semiconductor layer of an oxide separated from the gate electrode, a gate insulation layer provided between the gate electrode and the semiconductor layer, a first conductive portion, a second conductive portion, and a third insulating layer. The pixel electrode is connected to one selected from the first and second conductive portions. The display layer is configured to have a light emission or a change of optical characteristic occurring according to a charge supplied to the pixel electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.