Methods of manufacturing magnetoresistive random access memory devices
US9159767B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2014 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Feb 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a method of an MRAM device, first and second patterns are formed on a substrate alternately and repeatedly in a second direction. Each first pattern and each second pattern extend in a first direction perpendicular to the second direction. Some of the second patterns are removed to form first openings extending in the first direction. Source lines filling the first openings are formed. A mask is formed on the first and second patterns and the source lines. The mask includes second openings in the first direction, each of which extends in the second direction. Portions of the second patterns exposed by the second openings are removed to form third openings. Third patterns filling the third openings are formed. The second patterns surrounded by the first and third patterns are removed to form fourth openings. Contact plugs filling the fourth openings are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.