Semiconductor device having buried layer and method for forming the same
US9159785B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2013 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Oct 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices having a buried layer and methods for forming the same are disclosed. In an exemplary method, a hard mask layer can be provided on a semiconductor substrate. The hard mask layer can have a plurality of through-openings. A plurality of deep trenches can be formed in the semiconductor substrate using the hard mask layer as a mask. A bottom of each of the plurality of deep trenches in the semiconductor substrate can be doped to form a plurality of heavily-doped regions. One or more of the plurality of heavily-doped regions can be connected to form the buried layer in the semiconductor substrate. There is thus no need to use an epitaxial process to form active regions. In addition, lateral isolation structures can be simultaneously formed in the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.