Nitride semiconductor light emitting device and manufacturing method thereof

US9159875B2 · kind B2 · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

• Joo Young Cheon · Seocho-gu, KR
• Yu Ri Sohn · Seoul, KR

Key dates

• Filing date: Mar 4, 2013
• Grant date: Oct 13, 2015
• Expiry date: Apr 29, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8215

Abstract

A semiconductor light emitting device includes a first conductive semiconductor layer including a V-shaped recess in a cross-sectional view. An active layer is disposed on the first conductive semiconductor layer, conforming to the shape of the V-shaped recess. An intermediate layer is disposed on the active layer and is doped with a first impurity. A second conductive semiconductor layer is disposed on the intermediate layer. The intermediate layer includes a first intermediate layer and a second intermediate layer. The first intermediate layer is disposed on the active layer, conforming to the shape of the V-shape recess. The second intermediate layer is disposed on the first intermediate layer and includes a protrusion to fill the V-shaped recess.