Semiconductor light-emitting device
US9159882B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2014 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Sep 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/853
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor light-emitting device includes a first conductive type semiconductor layer having a main surface, a plurality of vertical type light-emitting structures protruding upward from the first conductive type semiconductor layer; a transparent electrode layer covering the plurality of vertical type light-emitting structures; and an insulation-filling layer disposed on the transparent electrode layer. The insulation-filling layer extends parallel to the first conductive type semiconductor layer so as to cover the plurality of vertical type light-emitting structures. A selected one of the first conductive type semiconductor layer and the insulation-filling layer, which is disposed on a light transmission path through which light generated from the plurality of vertical type light-emitting structures is radiated externally, has an uneven outer surface. The uneven outer surface is opposite to an inner surface of the selected one, and the inner surface faces the plurality of vertical type light-emitting structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.