Electrical device having magnetically doped topological insulator quantum well film

US9159909B2 · kind B2 · utility

Assignees

• TSINGHUA UNIVERSITY · CN
• INSTITUTE OF PHYSICS, THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Qi Xue · Nanjing, CN
• Ke He · Beijing, CN
• Xu-Cun Ma · Beijing, CN
• Xi Chen · Sunnyvale, US
• Li Wang
• Ya-Yu Wang · Beijing, CN
• Li Lv · Beijing, CN
• Cui-Zu Chang · Beijing, CN
• Xiao Feng · Beijing, CN

Key dates

• Filing date: Oct 16, 2013
• Grant date: Oct 13, 2015
• Expiry date: Oct 16, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/265
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

An electrical device includes an insulating substrate and a magnetically doped TI quantum well film. The insulating substrate includes a first surface and a second surface. The magnetically doped topological insulator quantum well film is located on the first surface of the insulating substrate. A material of the magnetically doped topological insulator quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3, wherein 0<x<1, 0<y<2, and values of x and y satisfies that an amount of a hole type charge carriers introduced by a doping with Cr is substantially equal to an amount of an electron type charge carriers introduced by a doping with Bi, the magnetically doped topological insulator quantum well film is in 3 QL thickness to 5 QL thickness.