Phase change material cell with piezoelectric or ferroelectric stress inducer liner
US9159920B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2013 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Sep 2, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0095
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An example embodiment disclosed is a process for fabricating a phase change memory cell. The method includes forming a bottom electrode, creating a pore in an insulating layer above the bottom electrode, depositing piezoelectric material in the pore, depositing phase change material in the pore proximate the piezoelectric material, and forming a top electrode over the phase change material. Depositing the piezoelectric material in the pore may include conforming the piezoelectric material to at least one wall defining the pore such that the piezoelectric material is deposited between the phase change material and the wall. The conformal deposition may be achieved by chemical vapor deposition (CVD) or by atomic layer deposition (ALD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.