Process for imprint patterning materials in thin-film devices
US9159925B2 · kind B2 · utility
6Cited by
5References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 14, 2012 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Nov 14, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
The present disclosure provides a method for patterning materials that are or are on top of chemically sensitive organic semiconductors. The method employs imprint lithography and a bilayer resist structure that simultaneously protects lower layers from harmful solvents and allows for cleaner liftoff by producing an undercut geometry to the resist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.