Thin film transistor
US9159938B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 28, 2013 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Aug 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a transition layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The transition layer is sandwiched between the insulating layer and the semiconductor layer. The transition layer is a silicon-oxide cross-linked polymer layer including a plurality of Si atoms. The plurality of Si atoms is bonded with atoms of the insulating layer and atoms of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.