CMP slurry composition for tungsten
US9163314B2 · kind B2 · utility
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2Claims
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Key dates
| Filing date | Jul 6, 2012 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Jul 6, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F3/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.