Patent · US Active

Integrated gas sensor

US9164052B1 · kind B1 · utility

28Cited by

33References

21Claims

0Family size

Assignee

Silicon Laboratories Inc. · US

Inventors

Raymond J. Speer · Dalkey, IE
Leon Cavanagh · Loughrea, IE
Peter J. Smith · Woodstock, GB

Key dates

Filing date	Sep 30, 2011
Grant date	Oct 20, 2015
Priority date	—
Expiry date	Feb 23, 2032

Classification

Technology area (CPC G)Physics
CPC primaryG01N27/045
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

An integrated circuit gas sensor system may include an integrated circuit having a bond pad layer and a dielectric layer formed after the bond pad layer. A conductor layer may be above the dielectric layer. The conductor layer may be utilized to form both gas sensor and humidity sensor conductor patterns, which may be planar. In one embodiment, the gas sensor is combined with a humidity sensor, the gas sensor and the humidity sensor covering more than 50% of the top surface of the integrated circuit. In one embodiment, the central region of the integrated circuit has a majority of its surface area utilized for the sensor structures, and in a more preferred embodiment has more than 80% of its surface area utilized for sensing structures. In one embodiment, resistive sensing may be utilized for the gas sensor and capacitive sensing may be utilized for the humidity sensor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.