Patent · US Active

Methods and apparatuses for low-noise magnetic sensors

US9164153B2 · kind B2 · utility

2Cited by

7References

22Claims

0Family size

Assignee

King Abdullah University of Science and Technology · SA

Inventors

Jürgen Kosel · Thuwal, SA
Jian Sun · Xiamen, CN

Key dates

Filing date	Jul 20, 2011
Grant date	Oct 20, 2015
Priority date	—
Expiry date	Apr 4, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/10
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a first voltage lead coupled to the semiconductor layer. In some embodiments, the first voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the conductive layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.