Method of determining deterioration state of memory device and memory system using the same
US9164881B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2013 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Nov 26, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/0409
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is provided for determining a deterioration condition of a memory device. The method includes calculating first information corresponding to a number of bits having a first logic value from data obtained by performing a first read operation on target storage region of the memory device using a first reference voltage as a read voltage, and calculating second information corresponding to a number of bits having a second logic value from data obtained by performing a second read operation on the target storage region using a second reference voltage as the read voltage. A deterioration condition of the target storage region is determined based on the first and second information. The first reference voltage is less than a first read voltage by which an erase state of the memory device is distinguished from an adjacent program state, and the second reference voltage is higher than the first read voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.