Carbon nanotube memory cell with enhanced current control
US9165633B2 · kind B2 · utility
0Cited by
21References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2013 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Feb 26, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A desired current through a carbon nano tube (CNT) element of a CNT memory device can be controlled by a wordline voltage, and a voltage on the CNT common node can be held constant. The common node can be constant at a source voltage if a p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) is used in the CNT memory device, or the common node can be constant at a supply voltage if an n-channel MOSFET is used in the CNT memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.