Memory system and method of driving memory system using zone voltages
US9165669B2 · kind B2 · utility
3Cited by
6References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 17, 2013 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Oct 17, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is provided for driving a nonvolatile memory device, including multiple strings, where each string is formed by penetrating plate-shaped word lines stacked on a substrate. The method includes configuring the word lines of a string in multiple zones based on zone configuration information, and applying zone voltages to the zones, respectively. The zone configuration information is varied according to a mode of operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.