Integrated circuit devices including interconnections insulated by air gaps and methods of fabricating the same
US9165820B2 · kind B2 · utility
2Cited by
2References
18Claims
0Family size
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Key dates
| Filing date | Aug 5, 2014 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Aug 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and methods of fabricating the same are provided. The semiconductor device may include interconnections extending in a first direction on a substrate and spaced apart from each other in a second direction perpendicular to the first direction, barrier dielectric patterns disposed on top surfaces of the interconnections, respectively, and an upper interlayer dielectric layer disposed on the interconnection. Respective air gaps are disposed between adjacent ones of the interconnections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.