Memory cell and method of manufacturing a memory cell
US9165932B2 · kind B2 · utility
0Cited by
6References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 25, 2012 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Sep 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/366
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell and a method of manufacturing a memory cell are provided. The memory cell includes a substrate; at least one first electrode disposed above the substrate; at least one second electrode disposed above the at least one first electrode; a moveable electrode disposed between the at least one first electrode and the at least one second electrode; wherein the moveable electrode is configured to move between the at least one first electrode and the at least one second electrode; wherein the moveable electrode comprises metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.