Semiconductor structure able to receive electromagnetic radiation, semiconductor component and process for fabricating such a semiconductor structure
US9165967B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2012 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Nov 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
A semiconducting structure configured to receive electromagnetic radiation and transform the received electromagnetic radiation into an electric signal, the semiconductor structure including a semiconducting support within a first surface defining a longitudinal plane, a first zone with a first type of conductivity formed in the support with a second zone with a second type of conductivity that is opposite of the first type of conductivity to form a semiconducting junction. A mechanism limiting lateral current includes a third zone formed in the support in lateral contact with the second zone, the third zone having the second type of conductivity for which majority carriers are electrons. The third zone has a sufficient concentration of majority carriers to have an increase in an apparent gap due to a Moss-Burstein effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.