Nitride semiconductor device

US9165999B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventor

• Kentaro Ikeda · Kawasaki, JP

Key dates

• Filing date: Mar 5, 2013
• Grant date: Oct 20, 2015
• Expiry date: Jun 25, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

According to one embodiment, a nitride semiconductor device including a device region and a guard ring formation region surrounding the device region, the nitride semiconductor device includes a first nitride semiconductor layer provided in the device region and the guard ring formation region; a second nitride semiconductor layer provided on the first nitride semiconductor layer and forming a hetero-junction with the first nitride semiconductor layer; and a shielding layer provided on the second nitride semiconductor layer in the guard ring formation region and electrically protecting the device region. A two-dimensional electron gas is present near an interface between the first nitride semiconductor layer and the second nitride semiconductor layer within the first nitride semiconductor layer below the shielding layer, and the shielding layer is in ohmic contact with the two-dimensional electron gas.