Semiconductor device and method for manufacturing the same
US9166021B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2013 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Oct 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Stable electrical characteristics and high reliability are provided for a miniaturized semiconductor device including an oxide semiconductor, and the semiconductor device is manufactured. The semiconductor device includes a base insulating layer; an oxide stack which is over the base insulating layer and includes an oxide semiconductor layer; a source electrode layer and a drain electrode layer over the oxide stack; a gate insulating layer over the oxide stack, the source electrode layer, and the drain electrode layer; a gate electrode layer over the gate insulating layer; and an interlayer insulating layer over the gate electrode layer. In the semiconductor device, the defect density in the oxide semiconductor layer is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.