Power semiconductor device with electrostatic discharge structure

US9166037B2 · kind B2 · utility

Assignee

• SINOPOWER SEMICONDUCTOR, INC. · TW

Inventor

• Wei-Chieh Lin · Hsinchu, TW

Key dates

• Filing date: May 5, 2011
• Grant date: Oct 20, 2015
• Expiry date: Feb 11, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A power semiconductor device with an electrostatic discharge (ESD) structure includes an N-type semiconductor substrate, at least one ESD device, and at least one trench type transistor device. The N-type semiconductor has at least two trenches, and the ESD device is disposed in the N-type semiconductor substrate between the trenches. The ESD device includes a P-type first doped region, and an N-type second doped region and an N-type third doped region disposed in the P-type first doped region. The N-type second doped region is electrically connected to a gate of the trench type transistor device, and the N-type third doped region is electrically connected to a drain of the trench type transistor device.