Semiconductor device and method of manufacturing
US9166046B2 · kind B2 · utility
2Cited by
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20Claims
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Key dates
| Filing date | Feb 14, 2014 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Feb 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device includes a gate structure, and a source region and a drain region on opposite sides of the gate structure. The source region comprises a first region of a first conductivity type, and a second region of a second conductivity type, the second conductivity type opposite to the first conductivity type. The first region is arranged between the second region and the gate structure. The second region comprises at least one projection protruding into the first region and toward the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.