Polarization resistant solar cell design using an oxygen-rich interface layer

US9166071B2 · kind B2 · utility

Assignee

• Silicor Materials Inc. · US

Inventors

• Bill Phan · San Jose, US
• Renhua Zhang · Santa Clara, US
• John Gorman · San Jose, US
• Omar Sidelkheir · Sunnyvale, US
• Jean Patrice Rakotoniaina · Halle (Saale), DE
• Alain Blosse · Belmont, US
• Martin Kaes · Berlin, DE

Key dates

• Filing date: Dec 24, 2009
• Grant date: Oct 20, 2015
• Expiry date: Jan 12, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A polarization resistant solar cell using an oxygen-rich interface layer is provided. The oxygen-rich interface layer may be comprised of SiOxNy, which may have a graded profile that varies between oxygen-rich proximate to the solar cell to nitrogen-rich distal to the solar cell. A silicon oxide passivation layer may be interposed between the solar cell and the SiOxNy graded dielectric layer. The graded SiOxNy dielectric layer may be replaced with a non-graded SiOxNy dielectric layer and a SiN AR coating.