PIN structure semiconductor optical receiver

US9166091B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Christophe Kopp · Fontanil-Cornillon, FR
• Jean-Marc Fedeli · Saint-Égrève, FR
• Sylvie Menezo · Voiron, FR

Key dates

• Filing date: Jun 20, 2013
• Grant date: Oct 20, 2015
• Expiry date: Jun 20, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

A PIN structure semiconductor optical receiver includes first and second electrical contact layers and an intrinsic layer disposed between them. The intrinsic layer includes a stud having a stud axis and a stud cross-section. The first and second contact layers have dimensions in a plane perpendicular to the stud axis that are greater than the stud's cross-section. These layers are also elongated and have longitudinal axes offset angularly relative to each other to minimize facing areas of said electrical contact layers.