Phase change memory cell with large electrode contact area

US9166161B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. 2 LLC · US

Inventors

• Matthew J. BrightSky · Pound Ridge, US
• Chung H. Lam · Williston, US
• Jing Li · Beekman, US
• Alejandro G. Schrott · New York, US
• Norma E. Sosa Cortes · Yorktown Heights, US

Key dates

• Filing date: Sep 19, 2014
• Grant date: Oct 20, 2015
• Expiry date: Sep 19, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A phase change memory cell and a method for fabricating the phase change memory cell. The phase change memory cell includes a bottom electrode and a first non-conductive layer. The first non-conductive layer defines a first well, a first electrically conductive liner lines the first well, and the first well is filled with a phase change material in the phase change memory cell. A second non-conductive layer is deposited above the first non-conductive layer. A second well is defined by the second non-conductive layer and positioned directly above the first well. A second electrically conductive liner lines at least one wall of the second well such that the second electrically conductive liner is not in physical contact with the first electrically conductive liner. Furthermore, the phase change material is deposited in the second well.