Flared laser oscillator waveguide
US9166369B2 · kind B2 · utility
11Cited by
38References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 27, 2013 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Aug 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A broad area semiconductor diode laser device includes a multimode high reflector facet, a partial reflector facet spaced from said multimode high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1. The broad area semiconductor laser device is a flared laser oscillator waveguide delivering improved beam brightness and beam parameter product over conventional straight waveguide configurations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.