Piezoelectric thin film resonator and filter
US9166557B2 · kind B2 · utility
3Cited by
3References
10Claims
0Family size
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Key dates
| Filing date | Dec 20, 2013 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Jan 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/6496
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode located to sandwich the piezoelectric film; a load film formed from patterns in a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, wherein the patterns are formed so as to surround a center of the resonance region and intersect with a pathway extending from the center to an outer periphery of the resonance region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.