Selective etching method
US9169437B2 · kind B2 · utility
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1References
8Claims
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Key dates
| Filing date | Sep 3, 2012 |
| Grant date | Oct 27, 2015 |
| Priority date | — |
| Expiry date | Sep 3, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/33
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A layer of a metal selected from titanium, niobium, tungsten, molybdenum, ruthenium, rhodium, arsenic, aluminum and gallium, an oxide of the metal, a nitride of the metal, silicon nitride, hafnium nitride, tantalum nitride, or an alloy of these metals, the layer being provided on an underlying base material selected from glass, silicon, copper and nickel, is selectively etched with an alkaline etching solution containing a predefined complexing agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.