Negative-type photoresist composition for thick film and use thereof
US9170491B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2014 |
| Grant date | Oct 27, 2015 |
| Priority date | — |
| Expiry date | Mar 24, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/114
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a negative-type photoresist composition for thick film, comprising: (A) 20 to 50 wt % of an alkali-soluble resin which is polymerized from a plurality of kinds of monomers, wherein the monomers includes compounds represented by formulas (1A) and (1B), and based on the weight ratio of the monomers to the alkali-soluble resin, the sum of the formula (1A) compound and the formula (1B) compound are 20 to 60%, and X of the formula (1A) and (1B) may be independently H, methyl or ethyl.(B) 10 to 30 wt % of crosslinker which can be a bisphenol fluorene derivative monomer having at least one ethylenically unsaturated double bond; (C) 5 to 15 wt % of photo initiator; and (D) residual solvent. The present invention also relates to use of the above-mentioned negative-type photoresist compound for thick film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.