Method of manufacturing a semiconductor device
US9171727B2 · kind B2 · utility
4Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2014 |
| Grant date | Oct 27, 2015 |
| Priority date | — |
| Expiry date | Jan 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After forming a first film over the main surface of a semiconductor substrate, the first film is patterned, thereby forming a control gate electrode for a non-volatile memory, a dummy gate electrode, and a first film pattern. Subsequently, a memory gate electrode for the non-volatile memory adjacent to the control gate electrode is formed. Then, the first film pattern is patterned thereby forming a gate electrode and a dummy gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.