Semiconductor devices and methods of fabricating the same
US9171781B2 · kind B2 · utility
4Cited by
10References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2013 |
| Grant date | Oct 27, 2015 |
| Priority date | — |
| Expiry date | Dec 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices, and methods of fabricating the same, include first conductive lines on a substrate, and a first molding layer covering the first conductive lines. The first conductive lines have air gaps between adjacent first conductive lines. Sidewalls of the first conductive lines and a bottom surface of the first molding layer collectively define a first gap region of each of the air gaps. The sidewalls of the first conductive lines and a top surface of the first molding layer collectively define a second air gap region of each of the air gaps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.