Method of manufacturing semiconductor device including thermal compression
US9171820B2 · kind B2 · utility
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14References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2013 |
| Grant date | Oct 27, 2015 |
| Priority date | — |
| Expiry date | Dec 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/323
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes attaching a curable film to a first connection member including a first circuit terminal, attaching a conductive film to a second connection member including a second circuit terminal, and thermally compressing the first connection member to the second connection member, with the first connection member and the second connection member placed such that the curable film and the conductive film face each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.