Group IV element doped P-type Zn(Mg,Cd,Be)O(S,Se) semiconductor
US9171912B2 · kind B2 · utility
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Key dates
| Filing date | Nov 11, 2010 |
| Grant date | Oct 27, 2015 |
| Priority date | — |
| Expiry date | Nov 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/86
Abstract
A p-type group II-VI semiconductor may include a group IV element as a dopant. The group II-IV semiconductor may be Zn1-a-b-cMgaCdbBecO1-p-qSpSeq, wherein a=0˜1, b=0˜1, c=0˜1, p=0˜1 and q=0˜1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.