Gate structure
US9171920B2 · kind B2 · utility
2Cited by
0References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2014 |
| Grant date | Oct 27, 2015 |
| Priority date | — |
| Expiry date | Feb 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a gate structure, which is applied for an electronic component comprising a substrate and an active region defined thereon, and such the gate structure is disposed in the active region and is a T-shaped gate having a stem with a height of 250 nm. Preferably, the gate structure has a gate length of 60 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.